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| Ordering number : ENA0425 VEC2611 SANYO Semiconductors DATA SHEET VEC2611 Features * N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications * * The VEC2611 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance, thereby enabling high-density mounting. 1.8V drive. Mounting height 0.75mm. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm20.8mm)1unit Mounted on a ceramic board (900mm20.8mm) Conditions N-channel 20 10 3 12 0.9 1.0 150 --55 to +150 P-channel -12 8 --2.6 --10.4 Unit V V A A W W C C Electrical Characteristics at Ta=25C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance V(BR)DSS IDSS IGSS VGS(off) yfs ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1.5A 20 1 10 0.4 3.3 5.6 1.3 V A A V S Symbol Conditions Ratings min typ max Unit Marking : CP Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62007PE TI IM TC-00000769 No. A0425-1/6 VEC2611 Continued from preceding page. Parameter Symbol RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=1.5A, VGS=4V ID=1A, VGS=2.5V ID=0.5A, VGS=1.8V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=4V, ID=3A VDS=10V, VGS=4V, ID=3A VDS=10V, VGS=4V, ID=3A IS=3A, VGS=0V ID=--1mA, VGS=0V VDS=--12V, VGS=0V VGS=6.4V, VDS=0V VDS=--6V, ID=--1mA VDS=--6V, ID=--1.3A ID=--1.3A, VGS=-4.5V ID=--0.7A, VGS=-2.5V ID=--0.3A, VGS=-1.8V VDS=--6V, f=1MHz VDS=--6V, f=1MHz VDS=--6V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--6V, VGS=--4.5V, ID=-2.6A VDS=--6V, VGS=--4.5V, ID=-2.6A VDS=--6V, VGS=--4.5V, ID=-2.6A IS=--2.6A, VGS=0V --12 --10 10 --0.3 2.5 4.2 80 115 155 450 100 85 15 70 65 50 6.5 0.8 2.0 --0.87 --1.5 105 165 265 --1.0 Ratings min typ 53 63 77 280 60 38 13 35 35 25 8.8 0.85 0.85 0.82 1.2 max 69 90 116 Unit m m m pF pF pF ns ns ns ns nC nC nC V V A A V S m m m pF pF pF ns ns ns ns nC nC nC V Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Package Dimensions unit : mm (typ) 7012-002 0.25 Electrical Connection 8 7 6 5 0.3 0.15 8 7 65 0.25 1 2 2.9 3 0.65 4 1 2 3 4 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Top view 2.8 2.3 0.75 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : VEC8 0.07 No. A0425-2/6 VEC2611 Switching Time Test Circuit [N-channel] VIN 4V 0V VIN ID=1.5A RL=6.67 VOUT VDD=10V 0V --4.5V VIN ID= --1.3A RL=4.6 VOUT [P-channel] VIN VDD= --6V D PW=10s D.C.1% D PW=10s D.C.1% G VEC2611 P.G 50 G S P.G 50 VEC2611 S 3.0 ID -- VDS 10.0V 4.0V 2.5 V 1.8V V 1.5 [Nch] --3.0 ID -- VDS 0V 5V --3 . --2 .5 V [Pch] 2.5 --2.5 Drain Current, ID -- A Drain Current, ID -- A 2.0 --2.0 5V --3 . 1.5 VGS=1.0V --4 . 8V --1. V --1.5 --1.5 1.0 --1.0 0.5 --0.5 VGS= --1.0V --0.1 --0.2 --0.3 --0.4 --0.5 IT04325 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0 Drain-to-Source Voltage, VDS -- V 4.0 3.5 IT03490 Drain-to-Source Voltage, VDS -- V --3.0 ID -- VGS [Nch] VDS= --6V --2.5 ID -- VGS [Pch] VDS=10V Drain Current, ID -- A Drain Current, ID -- A 3.0 2.5 2.0 1.5 --2.0 --1.5 C --25C C 1.0 0.5 0 0 0.2 0.4 0.6 Ta= 75 25 0.8 1.0 1.2 1.4 1.6 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 25 --1.4 C --0.5 Ta =7 5 --1.0 C --25 C --1.6 --1.8 Gate-to-Source Voltage, VGS -- V 160 IT03491 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 250 IT04326 [Nch] Ta=25C RDS(on) -- VGS [Pch] Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m 140 120 100 80 60 40 20 0 0 2 4 6 8 10 IT11098 Static Drain-to-Source On-State Resistance, RDS(on) -- m 200 1.0A 1.5A ID=0.5A 150 ID= --0.7A --1.3A 100 50 0 0 --1 --2 --3 --4 --5 --6 --7 --8 Gate-to-Source Voltage, VGS -- V Gate-to-Source Voltage, VGS -- V IT11099 No. A0425-3/6 VEC2611 140 RDS(on) -- Ta [Nch] Static Drain-to-Source On-State Resistance, RDS(on) -- m 300 RDS(on) -- Ta [Pch] Static Drain-to-Source On-State Resistance, RDS(on) -- m 120 250 100 80 60 0.5A , I D= 1.8V = A VGS =1.0 V, I D =2.5 1.5A VGS , I D= =4.0V V GS 200 150 100 40 --0.3A , I D= --1.8V = VGS = --0.7A 2.5V, I D V GS= ---1.3A .5V, I D= V GS= --4 20 0 --60 50 --40 --20 0 20 40 60 80 100 120 140 160 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C 3 IT11100 Ambient Temperature, Ta -- C 3 IT11101 yfs -- ID VDS=10V [Nch] Forward Transfer Admittance, yfs -- S yfs -- ID [Pch] VDS= --6V Forward Transfer Admittance, yfs -- S 2 10 7 5 3 2 1.0 7 5 3 2 2 C 25 10 7 5 3 2 Ta -25 =- C C 75 25C C --25 Ta= C 75 1.0 7 5 --0.1 2 3 5 7 --1.0 2 3 5 7 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 10 7 5 3 2 1.0 7 5 3 2 5 7 10 IT03494 IS -- VSD Drain Current, ID -- A --10 7 5 IT04329 [Nch] VGS=0V IS -- VSD [Pch] VGS=0V Source Current, IS -- A Source Current, IS -- A 3 2 --1.0 7 5 Ta= 75C 0.1 7 5 3 2 0.01 0.2 0.3 0.4 Ta= 7 5C 25 C --25 C 3 2 25C 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 --0.1 --0.4 --0.6 --25C --0.8 --1.0 --1.2 IT04330 Diode Forward Voltage, VSD -- V 3 2 IT03495 SW Time -- ID Diode Forward Voltage, VSD -- V 5 3 [Nch] VDD=10V VGS=4V Switching Time, SW Time -- ns SW Time -- ID [Pch] VDD= --6V VGS= --4.5V Switching Time, SW Time -- ns 100 7 5 3 2 10 7 5 3 2 1.0 0.1 td(off) tr 2 tf tr 100 7 5 3 2 td(on) td(off) tf td(on) 2 3 5 7 --1.0 2 3 5 7 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 10 IT03496 7 10 --0.1 Drain Current, ID -- A IT04331 No. A0425-4/6 VEC2611 1000 7 5 5 Ciss, Coss, Crss -- VDS [Nch] f=1MHz 1000 7 Ciss, Coss, Crss -- VDS [Pch] f=1MHz Ciss Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- pF 3 2 Ciss 3 2 100 7 5 3 2 Coss Crss 100 7 5 Coss Crss 10 0 2 4 6 8 10 12 14 16 18 20 3 0 --2 --4 --6 --8 --10 --12 IT04332 Drain-to-Source Voltage, VDS -- V 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1 2 3 4 5 6 7 8 IT03497 VGS -- Qg Drain-to-Source Voltage, VDS -- V --4.5 --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 [Nch] VGS -- Qg [Pch] Gate-to-Source Voltage, VGS -- V Gate-to-Source Voltage, VGS -- V VDS=10V ID=3A VDS= --6V ID= --2.6A 9 10 0 1 2 3 4 5 6 7 IT04333 Total Gate Charge, Qg -- nC IT03498 Total Gate Charge, Qg -- nC ASO 3 2 10 7 5 [Nch] ASO 3 2 --10 7 5 [Pch] IDP=12A PW10s IDP= --10.4A ID= --2.6A 1m ID=3A s 10 0 s Drain Current, ID -- A 3 2 1.0 7 5 3 2 0.1 7 5 3 2 Drain Current, ID -- A DC 10 op era tio 0m s 10 ms 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 DC 10 op era tio PW10s 1m 100s s 10 ms 0m s n( Ta = n( Operation in this area is limited by RDS(on). 25 C ) Ta = 25 C ) Operation in this area is limited by RDS(on). Ta=25C Single pulse Mounted on a ceramic board (900mm20.8mm) 1unit 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 0.01 0.01 Ta=25C Single pulse Mounted on a ceramic board (900mm20.8mm) 1unit 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 --0.01 --0.01 1.2 Drain-to-Source Voltage, VDS -- V IT11102 PD -- Ta [Nch, Pch] Drain-to-Source Voltage, VDS -- V 5 7 --10 23 IT11103 Allowable Power Dissipation, PD -- W 1.0 0.9 0.8 M ou nte do na ce 0.6 ram ic bo ard 0.4 (9 00 mm 2 0 0.2 .8m m) 1u nit 160 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- C IT11104 No. A0425-5/6 VEC2611 Note on usage : Since the VEC2611 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2007. Specifications and information herein are subject to change without notice. PS No. A0425-6/6 |
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